Electronic memory e ects in self-assembled monolayer systems
نویسندگان
چکیده
We report stable and reproducible switching and memory e ects in Self-Assembled Monolayers (SAMs). We demonstrate realization of negative di erential resistance (NDR) and charge storage in electronic devices that utilize single redox-centercontained SAM as the active component; and compare the e ects of various redox centers to switching and storage behavior. The devices exhibit electronically programmable and erasable memory bits with bit retention times greater than 15 min at room temperature. ? 2002 Elsevier Science B.V. All rights reserved.
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تاریخ انتشار 2002